对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2SJ528(L) | Hitachi Ltd | Power Field-Effect Transistor, 0.37ohm, DPAK-3 | - | |||||
2SJ528(L) | Renesas Electronics Corporation | 0.37ohm, POWER, FET, DPAK-3 | - | |||||
AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM | |||||
2SJ528L | Renesas Electronics Corporation | 7A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
2SJ528L-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -7A 220Mohm DPAK(L)-(2)/To-251, DPAK(L)-(2), /Tube | - | |||||
2SJ528(L)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,7A I(D),TO-251 | - | |||||
2SJ528(L)-(2) | Hitachi Ltd | Transistor | - |