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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SJ528(S) | Renesas Electronics Corporation | 0.37ohm, POWER, FET, DPAK-3 | - | |||||
| 2SJ528(S) | Hitachi Ltd | Power Field-Effect Transistor, 0.37ohm, DPAK-3 | - | |||||
| AD | FP50R06W2E3B11BOMA1 | Infineon Technologies | IGBT模块,FP50R06 - IGBT Module | |||||
| 2SJ528S | Renesas Electronics Corporation | 7A, 60V, 0.37ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
| 2SJ528STL-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -7A 220Mohm DPAK(S)/To-252, DPAK(S), /Embossed Tape | - | |||||
| 2SJ528STR-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -7A 220Mohm DPAK(S)/To-252, DPAK(S), /Embossed Tape | - | |||||
| 2SJ528(S)-(1) | Hitachi Ltd | Transistor | - | |||||
| 2SJ528(S)-(3) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,7A I(D),TO-252 | - | |||||
| 2SJ528(S)-(2) | Hitachi Ltd | Transistor | - | |||||
| 2SJ528(S)-(1) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,7A I(D),TO-252 | - | |||||
| 2SJ528(S)-(3) | Hitachi Ltd | Transistor | - | |||||
| 2SJ528(S)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,7A I(D),TO-252 | - | |||||
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