对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2SJ529(S) | Hitachi Ltd | Power Field-Effect Transistor, 10A I(D), 60V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
2SJ529(S) | Renesas Electronics Corporation | 10A, 60V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
AD | IPP60R060C7XKSA1 | Infineon Technologies | MOSFET/FET,600VCoolMOS™C7PowerTransistor | |||||
2SJ529S | Renesas Electronics Corporation | 10A, 60V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
2SJ529STL-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -10A 160Mohm DPAK(S)/To-252, DPAK(S), /Embossed Tape | - | |||||
2SJ529STR-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -10A 160Mohm DPAK(S)/To-252, DPAK(S), /Embossed Tape | - | |||||
2SJ529S-E | Renesas Electronics Corporation | 10A, 60V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | - | |||||
2SJ529(S)-(3) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA | - | |||||
2SJ529(S)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA | - | |||||
2SJ529(S)-(1) | Hitachi Ltd | Transistor | - | |||||
2SJ529(S)-(2) | Hitachi Ltd | Transistor | - | |||||
2SJ529(S)-(1) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA | - | |||||
2SJ529(S)-(3) | Hitachi Ltd | Transistor | - | |||||
2SJ529S | Inchange Semiconductor Company Ltd | MOSFETs;-10A;-60V;DPAK/TO-252 | - |