对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2SJ551(S) | Hitachi Ltd | Power Field-Effect Transistor, 0.11ohm, LDPAK-3 | - | |||||
2SJ551(S) | Renesas Electronics Corporation | 0.11ohm, POWER, FET, LDPAK-3 | - | |||||
AD | A2T26H160-24SR3 | NXP Semiconductor | 射频/微波组件,A2T26H160 - Airfast RF Power LDMOS Transistor | |||||
2SJ551S | Renesas Electronics Corporation | 18A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | - | |||||
2SJ551STR-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -18A 65Mohm LDPAK(S)-(1)/To-263, LDPAK(S)-(1), /Embossed Tape | - | |||||
2SJ551S-E | Renesas Electronics Corporation | 18A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | - | |||||
2SJ551STL-E | Renesas Electronics Corporation | 18A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | - | |||||
2SJ551(S)-(1) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,18A I(D),TO-263ABVAR | - | |||||
2SJ551(S)-(2) | Hitachi Ltd | Transistor | - | |||||
2SJ551(S)-(1) | Hitachi Ltd | Transistor | - | |||||
2SJ551(S)-(2) | Renesas Electronics Corporation | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,18A I(D),TO-263AB | - |