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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2SJ552(L) | Renesas Electronics Corporation | 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | - | |||||
| 2SJ552(L) | Hitachi Ltd | Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | - | |||||
| AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM | |||||
| 2SJ552L | Renesas Electronics Corporation | 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | - | |||||
| 2SJ552L-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -20A 55Mohm LDPAK(L)/To-262, LDPAK(L), /Tube | - | |||||
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