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搜索结果(共 200 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 2SK3018T106 ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
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对比 2SK3541T2L ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VMT3, 3 PIN
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广告 NGTB50N60FLWG ON Semiconductor
IGBT器件,Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
对比 2SK3019TL ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN
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对比 2SK3878(F) Toshiba America Electronic Components
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN
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对比 2SK1317-E Renesas Electronics Corporation
Nch Single Power MOSFET 1500V 2.5A 12000mohm TO-3P
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对比 2SK3065T100 ROHM Semiconductor
Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, SC-62, 3 PIN
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对比 2SK3747-1E ON Semiconductor
N-Channel Power MOSFET, 1500V, 2A, 13Ω, TO-3PF-3L, 30-TUBE
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对比 ADSP-21262SKSTZ200 Analog Devices Inc
3rd Generation Low Cost 32-Bit Floating-Point SHARC DSP
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对比 2SK1058 Renesas Electronics Corporation
7 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
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对比 2SK2225-E Renesas Electronics Corporation
N/A
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对比 2SK170 Toshiba America Electronic Components
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal
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对比 ADSP-21262SKBCZ200 Analog Devices Inc
3rd Generation Low Cost 32-Bit Floating-Point SHARC DSP
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对比 2SK4013 Toshiba America Electronic Components
TRANSISTOR 6 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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对比 2SK4017(Q) Toshiba America Electronic Components
MOSFET N-CH 60V 5A 2-7J2B
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对比 2SK2615 Toshiba America Electronic Components
TRANSISTOR 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-5K1B, 3 PIN, FET General Purpose Small Signal
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对比 2SK2925S Galaxy Microelectronics
, Diodes, Single, N, Y, 20W, 60W, ±20V
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对比 2SK3018 Galaxy Microelectronics
, Diodes, Single, N, N, 0.2W, 30W, ±20V
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对比 2SK3019 Galaxy Microelectronics
, Diodes, Single, N, N, 0.15W, 30W, ±20V
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对比 2SK3018 Luguang Electronic Technology
场效应晶体管, 0.2W, 30V, 0.1A, 4V, 0.8~1.5GS
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对比 2SK3019 Luguang Electronic Technology
场效应晶体管, 0.15W, 30V, 0.1A, 4V, 0.8~1.5GS
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