对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
AF2302NW | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NW | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AD | FD600R17KE3B2NOSA1 | Infineon Technologies | IGBT模块,FD600R17 - IGBT Module | |||||
AF2302NW | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
AF2302NWLA | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWA | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWL | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWA | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWL | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWLA | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AF2302NWL | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | - | |||||
AF2302NWA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
AF2302NWLA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | - |