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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| AF2302NWA | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF2302NWA | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
| AF2302NWA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
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