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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| AF6930NS | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NS | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AD | FGY120T65SPD-F085 | Onsemi | IGBT/MOSFET驱动器,FGY120T65 - IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode | |||||
| AF6930NS | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | - | |||||
| AF6930NSL | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSL | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSA | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSLA | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSLA | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSA | Anachip Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AF6930NSLA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | - | |||||
| AF6930NSL | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | - | |||||
| AF6930NSA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | - | |||||
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