Wide Band Low Power Amplifier, 60MHz Min, 3000MHz Max, TO-243C, SOT-89, 3 PIN

Wide Band Low Power Amplifier, 60MHz Min, 3000MHz Max, 1 Func, GAAS, TO-243C, SOT-89, 3 PIN

Infrared Sensor

Rectifier Diode, 1 Element, 1A, Silicon

Serial In Serial Out, 1000 Series, 128-Bit, Right Direction, True Output, MOS, PDIP16

Standard SRAM, 32KX8, 40ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28

Analog Circuit,

Parallel - Fundamental Quartz Crystal, 2.4576MHz Nom, HC-49/U, 2 PIN

Board Connector, 28 Contact(s), 1 Row(s), Male, Straight, Solder Terminal

DC/DC Converter; Product Weight (grams): 2.4; Input voltage min (V): 10.8; Input voltage max (V): 13.2; Output voltage min: 15; Output voltage max: 15; Output voltage dual assymetric (y/n): Dual; Output Power (W): 1; Max Output current (A): ±0.033; Efficiency (%): 80; Max Capacitive load (µF): ±47; Package type: SIP7; Mounting: PCB; W (in): 0.24; L (in): 0.76; H (in): 0.39; W (mm): 6; L (mm): 19.5; H (mm): 10; Min Operating temperature: -40; Max operating temperature (°C): 105; Isolation (VDC): 3000; EMC compliance 2: EN 55032 Class B; Case material: Plastic (flammability to UL 94V-0) ; Application 4 (building automation/IoT): 1; MTBF (h): 3600000; Derating : 95; Voltage Accuracy (%): -7.5~+2.5; Line Regulation (% of Vin): ±1.2% per 1% Vin Change; Load Regulation %: ±7.5; Ripple & Noise (mV p-p): 75; Switching Frequency typ (KHz): Variable 50; Short circuit protection: Continuous

DC/DC Converter; Product Weight (grams): 1.5; Input voltage min (V): 43.2; Input voltage max (V): 52.8; Output voltage min: 18; Output voltage max: 18; Output voltage dual assymetric (y/n): Single; Output Power (W): 0.5; Max Output current (A): 0.02777; Efficiency (%): 62; Max Capacitive load (µF): 100; Package type: SIP4; Mounting: PCB; W (in): 0.24; L (in): 0.46; H (in): 0.4; W (mm): 6; L (mm): 11.68; H (mm): 9.7; Min Operating temperature: -40; Max operating temperature (°C): 85; Isolation (VDC): 1000; EMC compliance 1: EN 55032 Class B; EMC compliance 2: EN 55032 Class B; Case material: Plastic (flammability to UL 94V-0) ; Application 4 (building automation/IoT): 1; Application 5 (Industrial): 1; MTBF (h): 1121000; Derating : 85; Voltage Accuracy (%): ±3; Line Regulation (% of Vin): ±1.2% per 1% Vin Change; Load Regulation %: ±10; Ripple & Noise (mV p-p): 100; Switching Frequency typ (KHz): Variable 80; Short circuit protection: Momentary

Shift Register, 100-Bit, MOS, MBCY8

DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

FIFO, 512X9, 45ns, Asynchronous, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

DC-DC Regulated Power Supply Module, 1 Output, 50W, METAL, CASE M02, MODULE

DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

Micro Peripheral IC