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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| BF999E6327 | Siemens | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | - | |||||
| BF999E6327 | Infineon Technologies AG | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
| AD | IPZ60R017C7XKSA1 | Infineon Technologies | MOSFET/FET,IPZ60R017 - 600V CoolMOS N-Channel Power MOSFET | |||||
| BF999E6327HTSA1 | Infineon Technologies AG | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
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