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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| BSS84 | Yangzhou Yangjie Electronics Co Ltd | Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
| BSS84 | WEITRON INTERNATIONAL CO., LTD. | Transistor | - | |||||
| AD | A2T26H160-24SR3 | NXP Semiconductor | 射频/微波组件,A2T26H160 - Airfast RF Power LDMOS Transistor | |||||
| BSS84 | North American Philips Discrete Products Div | Transistor, | - | |||||
| BSS84 | Infineon Technologies AG | Transistor, | - | |||||
| BSS84 | Infinex | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
| BSS84 | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | - | |||||
| BSS84 | Taitron Components Inc | Small Signal Field-Effect Transistor, | - | |||||
| BSS84 | Continental Device India Ltd | Small Signal Field-Effect Transistor, | - | |||||
| BSS84 | Micro Commercial Components | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, | - | |||||
| BSS84 | Diodes Incorporated | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
| BSS84 | PanJit Semiconductor | Product Status:NSND, Polarity:P, Config.(V):Single, VDS(±V):-50, VGS(A):20, ID(10V):-0.1, RDS(on) Max. (mΩ)(2.5V):10000, Ciss Typ.(V):45, VGS(th) Max.(10V):-2 | - | |||||
| BSS84 | SHIKUES 時科 | Id:-0.13A, Vds:-50V, Vgs:±20V | - | |||||
| BSS84 | Galaxy Microelectronics | , Diodes, Single, P, N, 0.36W, 50W, ±12V | - | |||||
| BSS84W | Luguang Electronic Technology | 场效应晶体管, 0.2W, -50V, -0.13A, -5V, -0.8~-2GS | - | |||||
| BSS84-3L | Galaxy Microelectronics | , Diodes, Single, P, N, 0.36W, 50W, ±20V | - | |||||
| BSS8402DW | Galaxy Microelectronics | , Diodes, P, N, 0.2W, -50V, ±20V, -0.13A | - | |||||
| BSS84ESL | Galaxy Microelectronics | , Diodes, Single, P, Y, 0.15W, 50W, ±20V | - | |||||
| BSS84EV | Galaxy Microelectronics | , Diodes, Single, P, Y, 0.25W, 50W, ±20V | - | |||||
| BSS84-7-F | MULTICOMP PRO | MOSFET, P CHANNEL, -50V, 1.2OHM, -130mA, SOT-23-3; Transistor Polarity:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:130mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins | - | |||||
| BSS84W | SHIKUES 時科 | Id:-0.13A, Vds:-60V, Vgs:±20V | - | |||||
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