对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BUK456-800 | Inchange Semiconductor Company Ltd | MOSFETs;4A;800V;TO-220 | - | |||||
BUK456-800B | Philips Semiconductors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
AD | A2T21H360-24SR6 | NXP Semiconductor | 射频/微波组件,Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |||||
BUK456-800A | NXP Semiconductors | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | - | |||||
BUK456-800B | North American Philips Discrete Products Div | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
BUK456-800A | Philips Semiconductors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
BUK456-800A127 | NXP Semiconductors | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | - | |||||
BUK456-800A,127 | NXP Semiconductors | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | - | |||||
BUK456-800A | North American Philips Discrete Products Div | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
BUK456-800B | NXP Semiconductors | TRANSISTOR 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | - | |||||
BUK456-800B,127 | NXP Semiconductors | 3.5A, 800V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | - | |||||
BUK456-800B127 | NXP Semiconductors | TRANSISTOR 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | - |