BUZ - 电子元器件列表 - datasheet5 集成电路查询网

对比	型号	厂商	描述	均价
对比	BUZ11-NR4941	ON Semiconductor	N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 800-TUBE	￥8.3615
对比	BUZ11_NR4941	ON Semiconductor	N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 6400-RAIL	￥6.5191
广告	BSC026NE2LS5ATMA1	Infineon Technologies	功率场效应晶体管,Power Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 数据手册立即购买了解更多
对比	BUZ11_NR4941	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN	-
对比	BUZ73	Siemens	Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ50A	Infineon Technologies AG	Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	-
对比	BUZ72	Infineon Technologies AG	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	-
对比	S-19311BUZA-E8T1U4	ABLIC Inc	Regulator,	-
对比	S-19311BUZA-V5T2U4	ABLIC Inc	Regulator,	-
对比	BUZ73A	Siemens	Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ72	Siemens	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ73A	Rochester Electronics LLC	5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	-
对比	BUZ71AL	Motorola Mobility LLC	12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	-
对比	BUZ80A	Infineon Technologies AG	Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ71	STMicroelectronics	17A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ74	Siemens	Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ73	Motorola Mobility LLC	7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	-
对比	BUZ50A	Siemens	Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ76	Siemens	Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	-
对比	BUZ71L	Motorola Mobility LLC	12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	-
对比	BUZ71	Harris Semiconductor	Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	-