搜索结果(共 200 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 BUZ11-NR4941 ON Semiconductor
N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 800-TUBE
¥8.3615 ecad
对比 BUZ11_NR4941 ON Semiconductor
N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 6400-RAIL
¥6.5191 ecad
广告 BSC026NE2LS5ATMA1 Infineon Technologies
功率场效应晶体管,Power Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
对比 BUZ11_NR4941 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
- ecad
对比 BUZ73 Siemens
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ50A Infineon Technologies AG
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- ecad
对比 BUZ72 Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- ecad
对比 S-19311BUZA-E8T1U4 ABLIC Inc
Regulator,
- ecad
对比 S-19311BUZA-V5T2U4 ABLIC Inc
Regulator,
- ecad
对比 BUZ73A Siemens
Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ72 Siemens
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ73A Rochester Electronics LLC
5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- ecad
对比 BUZ71AL Motorola Mobility LLC
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- ecad
对比 BUZ80A Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ71 STMicroelectronics
17A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ74 Siemens
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ73 Motorola Mobility LLC
7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- ecad
对比 BUZ50A Siemens
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ76 Siemens
Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
- ecad
对比 BUZ71L Motorola Mobility LLC
12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- ecad
对比 BUZ71 Harris Semiconductor
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- ecad
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