对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FGD3325G2-F085 | onsemi | IGBT, 250V, 25A, 1.35V, 330mJ, EcoSPARK®2, N-Channel Ignition, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified | ¥11.6625 | |||||
FGD3325G2-F085V | onsemi | IGBT, 250V, 25A, 1.35V, 330mJ, EcoSPARK®2, N-Channel Ignition, 2500-REEL, Automotive Qualified | - | |||||
AD | NE3515S02-T1D-A | Renesas | MOSFET/FET,NE3515S02 - RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET | |||||
FGD3325G2_F085 | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor | - | |||||
FGD3325G2_F085 | onsemi | 250V, 25A, 1.35V, 330mJ, DPAK EcoSPARK® II, N-Channel Ignition IGBT, TO-252 3L (DPAK), 5000-TAPE REEL | - |