对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FPD1500DFN | Filtronic Compound Semiconductor | Transistor | - | |||||
FPD1500DFN | RF Micro Devices Inc | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6 | - | |||||
AD | PSMN3R5-80PS,127 | Nexperia | MOSFET/FET,Nexperia PSMN3R5-80PS - 120A, 80V, 0.0035ohm, N-Channel Power MOSFET, TO-220AB | |||||
FPD1500DFNSQ | RF Micro Devices Inc | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6 | - | |||||
FPD1500DFNSR | RF Micro Devices Inc | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6 | - | |||||
FPD1500DFNSB | RF Micro Devices Inc | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6 | - |