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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FPD6836SOT343 | Filtronic Compound Semiconductor | Transistor, | - | |||||
| FPD6836SOT343 | RF Micro Devices Inc | Transistor, | - | |||||
| AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
| FPD6836SOT343 | Qorvo | Transistor, | - | |||||
| FPD6836SOT343E | Filtronic Compound Semiconductor | Transistor | - | |||||
| FPD6836SOT343ESR | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | - | |||||
| FPD6836SOT343E | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | - | |||||
| FPD6836SOT343ESB | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | - | |||||
| FPD6836SOT343ESQ | RF Micro Devices Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | - | |||||
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