Wed Feb 24 2021 18:12:47 GMT+0000 (Coordinated Universal Time)

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搜索结果(共 200 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 FQA28N50F Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28.4A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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对比 FQAF8N80 Rochester Electronics LLC
5.9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
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AD BLF888BS,112 Ampleon
射频功率场效应晶体管,BLF888BS - LDMOS RF Power Transistor
对比 FQA13N80 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12.6A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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对比 FQA8N100C ON Semiconductor
Power MOSFET, N-Channel, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-3P, 450-TUBE
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对比 FQA28N15 ON Semiconductor
Power MOSFET, N-Channel, QFET®, 150V, 33A, 90mΩ, TO-3P, 450-TUBE
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对比 FQAFREQ3AAD10010 Fox Electronics
Parallel - Fundamental Quartz Crystal, 16MHz Min, 40MHz Max, ULTRA MINIATURE, CERAMIC, SMD, 2 PIN
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对比 FQA47P06SMDR4 TT Electronics Resistors
Power Field-Effect Transistor, 55A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
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对比 FQAF17P10 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12.4A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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对比 FQAF19N20L Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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对比 FQAF48N20 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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对比 FQAG-FREQ2-BBE00010 Fox Electronics
Series - Fundamental Quartz Crystal, 10MHz Min, 15.999MHz Max, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN
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对比 FQAF17N40 Rochester Electronics LLC
12.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
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对比 FQAF47P06 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 38A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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对比 FQAF5N90 Rochester Electronics LLC
4.1A, 900V, 2.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
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对比 FQAF40N25 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 24A I(D), 250V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
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对比 FQAG-40.000MHZ-BBE10010 Fox Electronics
Parallel - Fundamental Quartz Crystal, 40MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN
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对比 FQA34N25 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 34A I(D), 250V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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对比 FQA24N50F Inchange Semiconductor Company Ltd
MOSFETs;24A;500V;TO-3P
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对比 FQA8N100C Inchange Semiconductor Company Ltd
MOSFETs;8A;1000V;TO-3P
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对比 FQA28N50F Inchange Semiconductor Company Ltd
MOSFETs;28.4A;500V;TO-3P
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