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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FQA12N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
| FQA70N08 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 77.5A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
| AD | IPL60R095CFD7AUMA1 | Arrow | Trans MOSFET N-CH 600V 25A 4-Pin VSON EP T/R | |||||
| FQAG-50.000MHZ-BBE10010 | Fox Electronics | Parallel - Fundamental Quartz Crystal, 50MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
| FQA24N50F | Rochester Electronics LLC | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | - | |||||
| FQAF55N10 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 41.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
| FQA8N80C_F109 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.4A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PN, 3 PIN | - | |||||
| FQAG-80.000MHZ-BBE00030 | Fox Electronics | Series - 3Rd Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
| FQA40MHZAAD00010 | Fox Electronics | Series - Fundamental Quartz Crystal, 40MHz Nom, ULTRA MINIATURE, CERAMIC, SMD, 2 PIN | - | |||||
| FQA44N08 | Rochester Electronics LLC | 49.8A, 80V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | - | |||||
| FQA28N15 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 33A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | - | |||||
| FQA13N50CF_F109 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PN, 3 PIN | - | |||||
| FQA11N40 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11.8A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
| FQA8N80C | Rochester Electronics LLC | 8.4A, 800V, 1.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | - | |||||
| FQA6N90C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
| FQA140N10 | Inchange Semiconductor Company Ltd | MOSFETs;140A;100V;TO-3P | - | |||||
| FQA40N25 | Inchange Semiconductor Company Ltd | MOSFETs;40A;250V;TO-3P | - | |||||
| FQA8N100C | Inchange Semiconductor Company Ltd | MOSFETs;8A;1000V;TO-3P | - | |||||
| FQA28N50F | Inchange Semiconductor Company Ltd | MOSFETs;28.4A;500V;TO-3P | - | |||||
| FQA70N15 | Inchange Semiconductor Company Ltd | MOSFETs;70A;150V;TO-3P | - | |||||
| FQA24N50F | Inchange Semiconductor Company Ltd | MOSFETs;24A;500V;TO-3P | - | |||||
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