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搜索结果(共 200 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 FQD2P25TF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD17N08LTF Rochester Electronics LLC
12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
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广告 IRF7811AVTRPBF Infineon Technologies
小信号场效应晶体管,Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
对比 FQD3N60CTF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD3N60 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD5N30TF Rochester Electronics LLC
4.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
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对比 FQD30N06LTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD2N50 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD5N30TF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD2N60CTM Rochester Electronics LLC
1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
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对比 FQD3P50TM-F085 ON Semiconductor
500V P-Channel MOSFET, TO-252 3L (DPAK), 2500-REEL
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对比 FQD12N20LTF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD7P06TM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD7P06TF Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD10N20CTM Rochester Electronics LLC
7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3
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对比 FQD5N50CTM_WS ON Semiconductor
500V N-Channel Advance QFET® C-Series, TO-252 3L (DPAK), 30000-TAPE REEL
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对比 FQD6N40CTM-NBEA002 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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对比 FQD7N10L Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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对比 FQD13N10 Inchange Semiconductor Company Ltd
MOSFETs;10A;100V;DPAK/TO-252
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对比 FQD50P06 Inchange Semiconductor Company Ltd
MOSFETs;-50A;-60V;TO-220
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对比 FQD50N06 Inchange Semiconductor Company Ltd
MOSFETs;50A;60V;TO-252
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