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对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 GB35XF120K International Rectifier
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONO, SIXPACK-17
- ecad
对比 GB35XF120K Vishay Intertechnologies
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17
- ecad
对比 FDC653N Fairchild Semiconductor
小信号场效应晶体管,Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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