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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| HGT1S10N120BNST | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | - | |||||
| HGT1S10N120BNST | onsemi | IGBT, 1200V, NPT, 800-REEL | ￥20.6297 | |||||
| AD | G2R120MT33J | Arrow | Silicon Carbide MOSFET N-Channel Enhancement Mode | |||||
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