搜索结果(共 200 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 HUFA76429D3 ON Semiconductor
N-Channel Logic Level UltraFET Power MOSFET 60V, 20A, 27mΩ, 1800-TUBE
- ecad
对比 HUFA76645S3ST-F085 ON Semiconductor
N-Channel Logic Level UltraFET® 100V, 75A, 15mΩ, TO-263 2L (D2PAK), 800-REEL
- ecad
广告 CSD25483F4 Texas Instruments
-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 245mOhm
对比 HUFA75645S3S ON Semiconductor
N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-REEL
¥29.4702 ecad
对比 HUFA75307T3ST ON Semiconductor
N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ, 4000-REEL
- ecad
对比 HUFA75345P3 Rochester Electronics LLC
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
- ecad
对比 HUFA76429D3ST Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
- ecad
对比 HUFA75345P3 Renesas Electronics Corporation
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- ecad
对比 HUFA76429D3S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
- ecad
对比 HUFA76429D3S Renesas Electronics Corporation
20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
- ecad
对比 HUFA76429D3ST Renesas Electronics Corporation
20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
- ecad
对比 HUFA76413DK8 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
- ecad
对比 HUFA75337S3ST Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
- ecad
对比 HUFA76407P3 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
- ecad
对比 HUFA75337S3S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
- ecad
对比 HUFA75345S3ST Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
- ecad
对比 HUFA75345S3S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
- ecad
对比 HUFA75337S3ST Renesas Electronics Corporation
75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
- ecad
对比 HUFA75337S3S Renesas Electronics Corporation
75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
- ecad
对比 HUFA75631SK8T Renesas Electronics Corporation
5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
- ecad
对比 HUFA76639S3S Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
- ecad
对比栏已满,请删除不需要的器件再继续添加哦!
对比栏