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搜索结果(共 200 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 HUFA75639S3R4851 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 56A I(D), 115V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA,
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对比 HUFA76633P3 Renesas Electronics Corporation
39A, 100V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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广告 BFP740E6327 Infineon Technologies
射频小信号双极晶体管,RF Small Signal Bipolar Transistor, X Band Germanium, NPN
对比 HUFA75639S3ST-N2457 Fairchild Semiconductor Corporation
Transistor
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对比 HUFA75321D3 Renesas Electronics Corporation
20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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对比 HUFA76419S3ST Rochester Electronics LLC
29A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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对比 HUFA75333G3 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 66A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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对比 HUFA76619D3 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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对比 HUFA75344S3ST_R4966 Fairchild Semiconductor Corporation
Power Field-Effect Transistor
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对比 HUFA76413D3 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 60V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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对比 HUFA76629D3ST Rochester Electronics LLC
20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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对比 HUFA75329G3 Renesas Electronics Corporation
49A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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对比 HUFA76407D3ST-S2457 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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对比 HUFA76419D3S ON Semiconductor
Power Field-Effect Transistor
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对比 HUFA75842S3ST Renesas Electronics Corporation
43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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对比 HUFA76413D3 Renesas Electronics Corporation
20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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对比 HUFA76423D3 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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对比 HUFA76413DK8T_F085 ON Semiconductor
60V, 5.1A,41mΩ, SO-8, Logic Level Dual N-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL
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对比 HUFA76609D3ST Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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对比 HUFA75339G3 Inchange Semiconductor Company Ltd
MOSFETs;75A;55V;TO-247
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对比 HUFA75545P3 Inchange Semiconductor Company Ltd
MOSFETs;75A;80V;TO-220
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