| 对比 | 型号 | 厂商 | 描述 | 均价 | ECAD | 数据手册 | 替代料 |
|---|---|---|---|---|---|---|---|
| 对比 | IRF840SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | ￥8.9284 |  | ||
| 对比 | IRF740SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | ￥15.0932 | | ||
| 广告 | IRF9540NPBF | Infineon Technologies | 功率场效应晶体管,Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
| 对比 | IRF840STRLPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | - | | ||
| 对比 | IRF840ASPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | ￥14.2429 | | ||
| 对比 | IRF9Z24SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | ￥12.8257 | | ||
| 对比 | IRF740ASPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥15.0223 | | ||
| 对比 | IRF540SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | ￥13.1800 | | ||
| 对比 | IRF510SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | ￥8.0780 | | ||
| 对比 | IRFZ44NSTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | ￥9.3535 | | ||
| 对比 | IRF530SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | ￥11.1250 | | ||
| 对比 | IRF9530SPBF | Vishay Intertechnologies | TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | - | | ||
| 对比 | IRF9540SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | ￥16.5104 | | ||
| 对比 | IRF740STRLPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | ￥13.3217 | | ||
| 对比 | IRF520NPBF | Infineon Technologies AG | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | ￥6.8026 | | ||
| 对比 | IRF9640SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | ￥8.9992 | | ||
| 对比 | IRFBC30ASPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | - | | ||
| 对比 | IRF9520SPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | - | | ||
| 对比 | IRF9640STRLPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | ￥13.4634 | | ||
| 对比 | IRFR110TRPBF | Vishay Intertechnologies | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | ￥5.4562 | | ||
| 对比 | IRF540PBF | Vishay Intertechnologies | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | ￥11.1959 | | ||
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