| 对比 | 型号 | 厂商 | 描述 | 均价 | ECAD | 数据手册 | 替代料 |
|---|---|---|---|---|---|---|---|
| 对比 | IRF1310NSTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥11.5538 |  | ||
| 对比 | IRF1010ESTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥11.3411 | | ||
| 广告 | BSC026NE2LS5ATMA1 | Infineon Technologies | 功率场效应晶体管,Power Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
| 对比 | IRF1010ZSTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | ￥9.8526 | | ||
| 对比 | IRF1010NSTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥10.8449 | | ||
| 对比 | IRF1404STRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥16.4446 | | ||
| 对比 | IRF1405STRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥15.8776 | | ||
| 对比 | AUIRF1405ZS | Infineon Technologies AG | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | ￥15.7358 | | ||
| 对比 | IRF1010ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥8.8602 | | ||
| 对比 | IRF1407STRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | ￥14.9561 | | ||
| 对比 | IRF1010EZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥9.7817 | | ||
| 对比 | IRF1405PBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥16.3737 | | ||
| 对比 | IRF1010NPBF | Infineon Technologies AG | Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥10.7741 | | ||
| 对比 | IRF1010EPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥6.3085 | | ||
| 对比 | IRF1404LPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | ￥17.8623 | | ||
| 对比 | IRF1404PBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥11.1994 | | ||
| 对比 | IRF1310NPBF | Infineon Technologies AG | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | ￥9.5691 | | ||
| 对比 | IRF1018ESTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | ￥9.2855 | | ||
| 对比 | IRF1405ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥13.5385 | | ||
| 对比 | IRF1324PBF | Infineon Technologies AG | Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | ￥17.2243 | | ||
| 对比 | IRF1404ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | ￥11.8373 | | ||
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