| 对比 | 型号 | 厂商 | 描述 | 均价 | ECAD | 数据手册 | 替代料 |
|---|---|---|---|---|---|---|---|
| 对比 | IRFW630BTM-FP001 | ON Semiconductor | Discrete MOSFET, TO-263 2L (D2PAK), 800-REEL | ￥4.2499 |  | ||
| 对比 | IRFW450 | STMicroelectronics | IRFW450, T247-3 | - | | ||
| 广告 | CSD18503Q5A | Texas Instruments | 40V, N ch NexFET MOSFET™, single SON5x6, 4.3mOhm | ||||
| 对比 | IRFW644B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | | ||
| 对比 | IRFW540ATM | Rochester Electronics LLC | 28A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW540ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW540A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW540A | Samsung Semiconductor | Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | | ||
| 对比 | IRFW640BTM_FP001 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | - | | ||
| 对比 | IRFW630BTM_FP001 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | - | | ||
| 对比 | IRFW840BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW550ATM | Rochester Electronics LLC | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW710BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW730BTM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW630BTM_FP001 | ON Semiconductor | Discrete MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL | - | | ||
| 对比 | IRFW740BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW550ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW740BTM | Rochester Electronics LLC | 10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | - | | ||
| 对比 | IRFW530ATM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | | ||
| 对比 | IRFW654BTM_FP001 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 21A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | - | | ||
| 对比 | IRFW740BTM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | | ||
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