对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 |
---|---|---|---|---|---|---|---|
对比 | IRFWZ24A | Samsung Semiconductor | Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW614B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
AD | IRF7811AVTRPBF | Infineon Technologies | 小信号场效应晶体管,Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||||
对比 | IRFW610A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW624B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFWZ24 | Samsung Semiconductor | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW640BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 获取价格 | ![]() | ||
对比 | IRFW840B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW840A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW740BTM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW630A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW530ATM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 | ![]() | ||
对比 | IRFW720B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW820BTM | Rochester Electronics LLC | 2.5A, 500V, 2.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW840BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW730BTM | Rochester Electronics LLC | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW640B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW730A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW634B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW710A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | 获取价格 | ![]() | ||
对比 | IRFW720BTM-NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 | ![]() |