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搜索结果(共 159 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 IRFW630BTM-FP001 ON Semiconductor
Discrete MOSFET, TO-263 2L (D2PAK), 800-REEL
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对比 IRFW644B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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广告 FDN327N Fairchild Semiconductor
小信号场效应晶体管,Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
对比 IRFW540ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW540ATM Rochester Electronics LLC
28A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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对比 IRFW540A Samsung Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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对比 IRFW540A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW640BTM_FP001 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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对比 IRFW740BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW550ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW630BTM_FP001 Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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对比 IRFW630BTM_FP001 ON Semiconductor
Discrete MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL
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对比 IRFW740B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW840BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW740BTM Rochester Electronics LLC
10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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对比 IRFW450 STMicroelectronics
IRFW450, T247-3
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对比 IRFW550ATM Rochester Electronics LLC
40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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对比 IRFW720BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW730BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW520ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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对比 IRFW820BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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