搜索结果(共 159 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 IRFW630BTM_FP001 ON Semiconductor
Discrete MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL
- ecad
对比 IRFW630BTM-FP001 ON Semiconductor
Discrete MOSFET, TO-263 2L (D2PAK), 800-REEL
- ecad
广告 ULQ2003ATDQ1 Texas Instruments
50-V, 7-ch automotive darlington transistor array
对比 IRFW740BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW740BTM Rochester Electronics LLC
10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
- ecad
对比 IRFW740BTM_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW740B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW630B ON Semiconductor
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- ecad
对比 IRFW640B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
- ecad
对比 IRFW730BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW730B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW540ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW730BTM_NL Rochester Electronics LLC
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
- ecad
对比 IRFW730BTM Rochester Electronics LLC
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
- ecad
对比 IRFW730BTM_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW550A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW550ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW540A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW720BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比 IRFW540A Samsung Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
- ecad
对比 IRFW530ATM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- ecad
对比栏已满,请删除不需要的器件再继续添加哦!
对比栏