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搜索结果(共 159 个)
对比 型号 厂商 描述 价格 ECAD 数据手册 替代料
对比 IRFWZ24A Samsung Semiconductor
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW614B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
AD IRF7811AVTRPBF Infineon Technologies
小信号场效应晶体管,Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
对比 IRFW610A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW624B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFWZ24 Samsung Semiconductor
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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对比 IRFW640BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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对比 IRFW840B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格
对比 IRFW840A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW740BTM_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格
对比 IRFW630A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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对比 IRFW530ATM_NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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对比 IRFW720B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格
对比 IRFW820BTM Rochester Electronics LLC
2.5A, 500V, 2.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
获取价格
对比 IRFW840BTM Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
获取价格
对比 IRFW730BTM Rochester Electronics LLC
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
获取价格
对比 IRFW640B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW730A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW634B Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
获取价格
对比 IRFW710A Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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对比 IRFW720BTM-NL Fairchild Semiconductor Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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