博客
搜索结果(共 200 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 IRLML6401TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
¥2.0262 footprint 3dModel
对比 IRLML6402TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
¥2.0262 footprint 3dModel
广告 ULN2003AIN Texas Instruments
50-V, 7-ch darlington transistor array, -40 to 105C
对比 IRLML2502TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
¥3.2838 footprint 3dModel
对比 IRLML6401TRPBF International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
- footprint 3dModel
对比 IRLML6402TRPBF International Rectifier
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
- footprint 3dModel
对比 IRLML2502TRPBF International Rectifier
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
-
对比 IRLML5203TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, MICRO-3
¥3.0044 footprint 3dModel
对比 IRLML2402TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥1.6070 footprint 3dModel
对比 IRLML2803TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥1.9563 footprint 3dModel
对比 IRLML6344TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥3.0742 footprint 3dModel
对比 IRLML0100TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, MICRO-3
¥2.3755 footprint 3dModel
对比 IRLML0060TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥3.0044 footprint 3dModel
对比 IRLML9301TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.5852 footprint 3dModel
对比 IRLML5103TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
¥2.4454 footprint 3dModel
对比 IRLML6302TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
¥3.2140
对比 IRLML5203TRPBF International Rectifier
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
-
对比 IRLML2244TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.7948 footprint 3dModel
对比 IRLML2402TRPBF International Rectifier
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
-
对比 IRLML0030TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥1.6769 footprint 3dModel
对比 IRLML6244TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 6.3A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.2358 footprint 3dModel
对比栏已满,请删除不需要的器件再继续添加哦!
对比栏