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搜索结果(共 4 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 JANSR2N7431U International Rectifier
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN
- ecad
对比 JANSR2N7431U Defense Logistics Agency
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN
- ecad
对比 TP65H070LSG
650V 72mΩ 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET 通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率
对比 JANSR2N7431U Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN
- ecad
对比 JANSR2N7431U Defense Supply Center Columbus
TRANSISTOR 75 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD2, 3 PIN, FET General Purpose Power
- ecad
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