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对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 JANTXV2N1716S Microsemi Corporation
Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
- ecad
对比 JANTXV2N1716S Defense Logistics Agency
Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
- ecad
广告 TPH3206PSB
采用 TO-220 封装的 650V 150mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
对比 JANTXV2N1716S Defense Supply Center Columbus
TRANSISTOR 0.75 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
- ecad
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