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搜索结果(共 4 个)
对比 型号 厂商 描述 均价 ECAD 数据手册 替代料
对比 JANTXV2N7218U International Rectifier
Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
- ecad
对比 JANTXV2N7218U Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
- ecad
对比 TP65H035WS
采用 TO-247 封装的 650V 35mΩ 氮化镓GaN FET。通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷,提供更高的效率,明显超越传统硅 (Si) 器件,具有显著优势。
对比 JANTXV2N7218U Defense Logistics Agency
Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
- ecad
对比 JANTXV2N7218U Defense Supply Center Columbus
TRANSISTOR 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN, FET General Purpose Power
- ecad
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