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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| LWE2010S | Philips Semiconductors | Transistor | - | |||||
| LWE2010S | NXP Semiconductors | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | - | |||||
| AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM | |||||
| LWE2010STRAY | NXP Semiconductors | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, FO-93, 2 PIN, BIP RF Power | - | |||||
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