| 对比 | 型号 | 厂商 | 描述 | 均价 | ECAD | 数据手册 | 替代料 |
|---|---|---|---|---|---|---|---|
| 对比 | NTP2955G | ON Semiconductor | Power MOSFET -60V -12A 196 mOhm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE | ￥6.9464 |  | ||
| 对比 | MAX8530ETTP2+T | Maxim Integrated Products | Fixed Positive LDO Regulator, 2 Output, 2.5V1, 1.8V2, BICMOS, PDSO6, 3 X 3 MM, 0.80 MM PITCH, LEAD FREE, THIN, DUAL, QFN-6 | - | | ||
| 广告 | FDN327N | Fairchild Semiconductor | 小信号场效应晶体管,Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
| 对比 | ATP202-TL-H | ON Semiconductor | N-Channel Power MOSFET, 30V, 50A, 12mΩ, DPAK (Single Gauge) / ATPAK, 3000-REEL | - | | ||
| 对比 | ZXTP2029FTA | Diodes Incorporated | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23, 3 PIN | - | | ||
| 对比 | ZXTP2012GTA | Diodes Incorporated | Power Bipolar Transistor, 5.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin, TO-261AA, 4 PIN | ￥6.1667 | | ||
| 对比 | TP2540N8-G | Microchip Technology Inc | 0.125A, 400V, 30ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA | ￥10.2070 | | ||
| 对比 | TP2540N3-G | Microchip Technology Inc | 86mA, 400V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | ￥8.8602 | | ||
| 对比 | TP2104K1-G | Microchip Technology Inc | 160mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | ￥3.6150 | | ||
| 对比 | TP2104N3-G | Microchip Technology Inc | 250mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | ￥4.1112 | | ||
| 对比 | RK73H1ETTP27R4F | KOA Speer Electronics Inc | Fixed Resistor, Metal Glaze/thick Film, 0.1W, 27.4ohm, 50V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 0402, CHIP | - | | ||
| 对比 | TP2520N8-G | Microchip Technology Inc | 0.26A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA | ￥7.3717 | | ||
| 对比 | RK73B1ETTP221J | KOA Speer Electronics Inc | Fixed Resistor, Metal Glaze/thick Film, 0.063W, 220ohm, 50V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT | - | | ||
| 对比 | TP2502N8-G | Microchip Technology Inc | 0.63A, 20V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA | ￥6.7338 | | ||
| 对比 | TP2510N8-G | Microchip Technology Inc | 0.48A, 100V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA | ￥8.0805 | | ||
| 对比 | ZXTP2012ZTA | Diodes Incorporated | Power Bipolar Transistor, 4.3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN | ￥6.1667 | | ||
| 对比 | ZXTP25020DZTA | Diodes Incorporated | Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN | - | | ||
| 对比 | ZXTP25020CFFTA | Diodes Incorporated | Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-23F, 3 PIN | - | | ||
| 对比 | ZXTP2039FTA | Diodes Incorporated | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3 | - | | ||
| 对比 | ZXTP25100CZTA | Diodes Incorporated | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN | - | | ||
| 对比 | ZXTP2008ZTA | Diodes Incorporated | Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-89, 4 PIN | ￥6.0250 | | ||
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