对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
C-IXTD8P50 | IXYS Corporation | Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IXTD8P50 | IXYS Corporation | Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2 | - | |||||
AD | IPP60R060C7XKSA1 | Infineon Technologies | MOSFET/FET,600VCoolMOS™C7PowerTransistor | |||||
W-IXTD8P50 | IXYS Corporation | Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - | |||||
IXTD8P50-5B | IXYS Corporation | Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE | - | |||||
T-IXTD8P50 | IXYS Corporation | Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | - |