Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 最大正向电压 (VF) | 最大钳位电压 | 最大功率耗散 | 二极管元件材料 | 二极管类型 | 极性 | 配置 | 表面贴装 | 最大重复峰值反向电压 | 元件数量 | 其他特性 | 正向电压最小值(VF) | 反向测试电压 | 认证状态 | JESD-30 代码 | JESD-609代码 | 参考标准 | JEDEC-95代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 端子数量 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | Date Of Intro | YTEOL | |
对比 | BAS17,215 | Nexperia | 查询价格 | Active | 960 mV | 250 mW | SILICON | STABISTOR DIODE | SINGLE | YES | 1 | 870 mV | 4 V | Not Qualified | R-PDSO-G3 | e3 | IEC-60134 | TO-236AB | 1 | 150 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BAS17,215 | 229119436 | 2024-04-24 08:27:48 | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 8541.10.00.80 | [object Object] | 1991-04-01 | 4 | ||||||||||
对比 | BAS17,215 | NXP Semiconductors | 查询价格 | Yes | Transferred | 960 mV | 250 mW | SILICON | STABISTOR DIODE | SINGLE | YES | 1 | 870 mV | 4 V | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 150 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BAS17,215 | 2245 | 2023-08-02 04:46:26 | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||
对比 | VR60-F | Rectron Semiconductor | 查询价格 | Active | STABISTOR DIODE | 2350 | 2023-07-10 18:11:02 | compliant | Mainland China | EAR99 | 4 | ||||||||||||||||||||||||||||||||||||||||||
对比 | BAS17 | Nexperia | 查询价格 | Yes | Active | 960 mV | 250 mW | SILICON | STABISTOR DIODE | SINGLE | YES | 5 V | 1 | 870 mV | 4 V | R-PDSO-G3 | e3 | AEC-Q101; IEC-60134 | TO-236AB | 1 | 150 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BAS17 | 229119436 | 2023-10-01 22:47:24 | SOT-23, 3 PIN | compliant | Mainland China, Malaysia | EAR99 | 8541.10.00.80 | 1980-04-19 | 4 | |||||||||||||
对比 | BAS17TRL | NXP Semiconductors | 查询价格 | Yes | Yes | Active | 960 mV | SILICON | STABISTOR DIODE | SINGLE | YES | 1 | 870 mV | Not Qualified | R-PDSO-G3 | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAS17TRL | 2245 | 2024-04-02 15:20:45 | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.80 | 3.5 | ||||||||||||||||||||
对比 | SV-4SSVO | Sanken Electric Co Ltd | 查询价格 | Not Recommended | SILICON | STABISTOR DIODE | COMPLEX | NO | 2 | UL FLAMMABILITY | Not Qualified | O-PALF-W2 | 100 °C | -40 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 4317400 | 2024-04-02 17:21:20 | unknown | EAR99 | 8541.10.00.80 | 3 | ||||||||||||||||||||||||||
对比 | BAS17TRL13 | NXP Semiconductors | 查询价格 | Yes | Yes | Active | 960 mV | SILICON | STABISTOR DIODE | SINGLE | YES | 1 | 870 mV | Not Qualified | R-PDSO-G3 | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAS17TRL13 | 2245 | 2024-04-02 15:17:35 | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.80 | 3.5 | ||||||||||||||||||||
对比 | MPD200HR | Digitron Semiconductors | 查询价格 | Active | 1.76 V | 500 mW | SILICON | STABISTOR DIODE | SINGLE | NO | 1 | HIGH RELIABILITY | 1.6 V | O-XALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MPD200HR | 161776101 | 2024-03-02 22:32:23 | O-XALF-W2 | unknown | EAR99 | 8541.10.00.80 | 4 | ||||||||||||||||||
对比 | BAS17T/R | Nexperia | 查询价格 | Yes | Active | STABISTOR DIODE | e3 | 1 | 260 | 30 | TIN | BAS17T/R | 229119436 | 2023-10-01 22:47:38 | compliant | EAR99 | 2017-02-01 | 2 | |||||||||||||||||||||||||||||||||||
对比 | 933526230215 | Nexperia | 查询价格 | Yes | Active | 960 mV | 250 mW | SILICON | STABISTOR DIODE | SINGLE | YES | 1 | 870 mV | Not Qualified | R-PDSO-G3 | e3 | IEC-60134 | 1 | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 933526230215 | 229119436 | 2023-10-01 22:46:07 | PLASTIC, SMD, 3 PIN | compliant | Mainland China, Malaysia | EAR99 | 8541.10.00.80 | 4 | |||||||||||||||||
对比 | VR60 | Rectron Semiconductor | 查询价格 | Yes | Active | 1.5 V | SILICON | STABISTOR DIODE | SINGLE | NO | 1 | 500 mV | Not Qualified | O-PALF-W2 | e3 | DO-15 | 150 °C | -55 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | 2350 | 2023-08-02 03:06:01 | DO-15 | O-PALF-W2 | 2 | not_compliant | Mainland China | EAR99 | 8541.10.00.80 | 4 | |||||||||||||||
对比 | VR60-T | Rectron Semiconductor | 查询价格 | Yes | Yes | Active | 1.5 V | SILICON | STABISTOR DIODE | SINGLE | NO | 1 | 500 mV | Not Qualified | O-PALF-W2 | e3 | DO-15 | 150 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | 2350 | 2023-07-10 19:07:17 | DO-15 | DO-15, 2 PIN | 2 | not_compliant | Mainland China | EAR99 | 8541.10.00.80 | 4 | ||||||||||||||||
对比 | VR60-B | Rectron Semiconductor | 查询价格 | Yes | Yes | Active | 1.5 V | SILICON | STABISTOR DIODE | SINGLE | NO | 1 | 500 mV | Not Qualified | O-PALF-W2 | e3 | DO-15 | 150 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | 2350 | 2023-07-10 23:42:12 | DO-15 | DO-15, 2 PIN | 2 | not_compliant | Mainland China | EAR99 | 8541.10.00.80 | 4 | ||||||||||||||||
对比 | VR60 | Taiwan Semiconductor | 查询价格 | Yes | Active | 1.5 V | STABISTOR DIODE | 1 | 260 | ISOLATED | 229119968 | 2024-04-02 17:38:06 | compliant | EAR99 | 2 | ||||||||||||||||||||||||||||||||||||||
对比 | MSV101CE3/TR | Microchip Technology Inc | 查询价格 | Yes | Active | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-01 21:05:09 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 | ||||||||||||||||||||||||
对比 | MSV101BE3/TR | Microchip Technology Inc | 查询价格 | Yes | Active | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-02 02:30:37 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 | ||||||||||||||||||||||||
对比 | MSV101CE3 | Microchip Technology Inc | 查询价格 | Yes | Active | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-01 20:31:39 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 | ||||||||||||||||||||||
对比 | MSV101DE3/TR | Microchip Technology Inc | 查询价格 | Yes | Active | 1.5 V | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-01 18:51:52 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 | |||||||||||||||||||||||
对比 | MSV101GE3 | Microchip Technology Inc | 查询价格 | Yes | Active | 1.5 V | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-01 19:11:50 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 | |||||||||||||||||||||
对比 | MSV101EE3/TR | Microchip Technology Inc | 查询价格 | Yes | Active | 1.5 V | 1 W | SILICON | STABISTOR DIODE | BIDIRECTIONAL | COMMON BIPOLAR TERMINAL, 2 ELEMENTS | NO | 2 | HIGH RELIABILITY | O-PALF-W2 | DO-201AA | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | 2188 | 2023-08-02 15:12:17 | PLASTIC PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 3.5 |