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| 参数名称 | 参数值 |
|---|---|
| Source Content uid | RMLV0808BGSB-4S2#AA0 |
| Brand Name | Renesas |
| 是否无铅 |  不含铅 |
| 是否Rohs认证 |  符合 |
| 生命周期 | Active |
| Objectid | 8324449363 |
| 零件包装代码 | TSOP(44) |
| 包装说明 | TSOP2, TSOP44,.46,32 |
| 针数 | 44 |
| 制造商包装代码 | PTSB0044GD |
| Reach Compliance Code | Compliant |
| ECCN代码 | 3A991.B.2.A |
| HTS代码 | 8542.32.00.41 |
| Factory Lead Time | 18 weeks |
| 风险等级 | 2.27 |
| Samacsys Description | The RMLV0808BGSB is a family of 8-Mbit static RAMs organized 1, 048, 576-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0808BGSB has realized higher density, higher performance and low power consumption. The RMLV0808BGSB offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II). |
| Samacsys Manufacturer | Renesas Electronics |
| Samacsys Modified On | 2025-01-29 12:30:45 |
| 最长访问时间 | 45 ns |
| 其他特性 | IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G44 |
| 长度 | 18.41 mm |
| 内存密度 | 8388608 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 44 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 1MX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSOP2 |
| 封装等效代码 | TSOP44,.46,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL |
| 座面最大高度 | 1.2 mm |
| 最大待机电流 | 0.00001 A |
| 最小待机电流 | 1.5 V |
| 最大压摆率 | 0.03 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 2.7 V |
| 标称供电电压 (Vsup) | 3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | GULL WING |
| 端子节距 | 0.8 mm |
| 端子位置 | DUAL |
| 宽度 | 10.16 mm |
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