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手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FDC9239TP | Microchip Technology Inc | IC,DISK/TAPE SUPPORT CIRCUIT,CMOS,DIP,20PIN,PLASTIC | - | |||||
| FDCI-6500-2.6 | Bel Fuse | General Purpose Inductor, 6500uH, 1 Element, Ferrite-Core, | - | |||||
| AD | MSP430F1132IPWR | Texas Instruments | 16位微控制器,MSP430F1132 16-bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, 10 bit ADC | |||||
| FDC6506P | VBsemi 微碧 | MOS管 Dual P-Channel VDS=20V VGS=±12V ID=3.6A RDS(ON)=75mΩ@4.5V TSOP6, SMT, 1.14W, VBsemi Electronics Co. Ltd, P-沟道, 3.6A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), China Taiwan, 75mΩ, 210pF, 20V, MOSFET, Tape/reel, -55℃~+150℃, 单路, 33pF, 5.2nC, 2V@250µA, 8nC | - | |||||
| FDC86244 | VBsemi 微碧 | MOS管 N-Channel VDS=100V VGS=±20V ID=3A RDS(ON)=105mΩ@4.5V TSOP6, SMT, VBsemi, VBsemi Electronics Co. Ltd, N-沟道, 3A, TSOP6, -55℃~+150℃(TJ), China Taiwan, 105mΩ, 100V, MOSFET, 100V, Tape/reel, ±20V, 单路, Yes, 42pF, Active, 2.5V@250µA, 13nC | - | |||||
| FDC5614P | MSKSEMI 美森科 | - | ||||||
| FDC604P(UMW) | UMW 友台半导体 | - | ||||||
| FDC602P | VBsemi 微碧 | MOS管 P-Channel VDS=30V VGS=±20V ID=4A RDS(ON)=54mΩ@4.5V TSOP6, SMT, VBsemi Electronics Co. Ltd, 4A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), 54mΩ, 450pF, 30V, MOSFET, 6Pin, 30V, Tape/reel, ±20V, 单路, 3000pcs, Active, 63pF, 2V@250µA, 15nC | - | |||||
| FDC2512 | VBsemi 微碧 | MOS管 N-Channel VDS=100V VGS=±20V ID=3A RDS(ON)=105mΩ@4.5V TSOP6, SMT, VBsemi, N-沟道, 3A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), 100V, 1.10mm, MOSFET, 6Pin, Tape/reel, -55℃~+150℃, ±20V, 单路, 3000pcs, Yes, Active, 2.5V@250µA, 13nC | - | |||||
| FDC638P | VBsemi 微碧 | MOS管 P-Channel VDS=30V VGS=±20V ID=4A RDS(ON)=54mΩ@4.5V TSOP6, SMT, 2W, VBsemi Electronics Co. Ltd, 4A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), China Taiwan, 54mΩ, 30V, MOSFET, 30V, Tape/reel, 单路, Yes, 63pF, Active, 5.1nC, 2V@250µA, 15nC | - | |||||
| FDC6312P | VBsemi 微碧 | MOS管 Dual P-ChannelVDS=20V VGS=±12V ID=3.6A RDS(ON)=75mΩ@4.5V TSOP6, SMT, P-沟道, 3.6A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), 75mΩ, 210pF, 20V, 1.10mm, MOSFET, 6Pin, 20V, Tape/reel, -55℃~+150℃, ±12V, 双路, 3000pcs, Yes, 33pF | - | |||||
| FDC606P-MS | MSKSEMI 美森科 | - | ||||||
| FDC6401N | MSKSEMI 美森科 | - | ||||||
| SSCFES3FDC | AFsemi 晶岳 | - | ||||||
| AW86511FDCBDNR | AWINIC 艾为  | High Sensitivity Micropower Unipolar Hall-effect Switch | - | |||||
| FDC6321C | VBsemi 微碧 | MOS管 N+P Channel VDS=20V VGS=±20V ID=5.5A,3.4A TSOP6, SMT, 1.15W, 5.5A,3.4A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), 30mΩ,79mΩ, 20V, 1.10mm, MOSFET, 6Pin, 20V, Tape/reel, -55℃~+150℃, 单路, Active, 3.6nC | - | |||||
| FDC8884 | VBsemi 微碧 | MOS管 N-Channel VDS=30V VGS=±20V ID=5.5A RDS(ON)=27mΩ@4.5V TSOP6, SMT, 1.3W, 5.5A, 3.05 x 1.65mm, TSOP6, -55℃~+150℃(TJ), 27mΩ, 424pF, 30V, 1.10mm, MOSFET, 6Pin, Tape/reel, -55℃~+150℃, 单路, 42pF, Active, 4.2nC, 1.5V@250µA, 13nC | - | |||||
| FDC5661N | VBsemi 微碧 | MOS管 N-Channel VDS=60V VGS=±20V ID=7A RDS(ON)=35mΩ@4.5V TSOP6, SMT, 5W, 7A, TSOP6, -55℃~+150℃(TJ), China Taiwan, 35mΩ, 560pF, 60V, MOSFET, 6Pin, 60V, Tape/reel, -55℃~+150℃, 单路, 55pF, 12nC, 2.5V@250µA, 12nC | - | |||||
| FDC637BNZ | VBsemi 微碧 | MOS管 N-Channel VDS=30V VGS=±20V ID=5.5A RDS(ON)=27mΩ@4.5V TSOP6, SMT, VBsemi, 1.3W, N-沟道, 5.5A, TSOP6, -55℃~+150℃(TJ), 27mΩ, 30V, MOSFET, Tape/reel, -55℃~+150℃, ±20V, 单路, Yes, 42pF, Active, 4.2nC, 1.5V@250µA, 13nC | - | |||||
| FDC6327C-MS | MSKSEMI 美森科 | - | ||||||
| SSCFES5FDC | AFsemi 晶岳 | - | ||||||
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