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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| SD10414JECES | Solitron Devices Inc | Diode, | - | |||||
| SD125SE30C | Sensitron Semiconductors | Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, Silicon, DIE-2 | - | |||||
| AD | SD1743 | Solentec Limited | PULL ACTION HEAVYDUTY SOLENOID,12W 24VDC | |||||
| SD18115E6-6.000-S | Sunny Electronics Corp | Parallel - Fundamental Quartz Crystal, 6MHz Nom, | - | |||||
| SD18350E8-48.000-S | Sunny Electronics Corp | Parallel - 3Rd Overtone Quartz Crystal, 48MHz Nom, | - | |||||
| SD1479 | STMicroelectronics | TRANSISTOR,BJT,NPN,16V V(BR)CEO,5A I(C),STX-8 | - | |||||
| SD120UF400C45 | Sensitron Semiconductors | Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, DIE | - | |||||
| SD1015 | Advanced Power Technology | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN | - | |||||
| SD1F1-342 | Data Device Corporation | Converter | - | |||||
| SD1D1-322 | Data Device Corporation | Converter, | - | |||||
| SD1891 | Microsemi Corporation (now Microchip) | RF Power Bipolar Transistor, L Band, Silicon, NPN | - | |||||
| 2SD1664 | MDD 辰达行 | - | ||||||
| SD12 | MDD 辰达行 | Plastic-Encapsulate ESD Protection Diodes, SOD-323, Uni-directional TVS, 350W Peak Pulse Power, IEC61000-4-2 ±15kV (air), ±8kV (contact), IEC61000-4-4 40A (5/50ns), UL 94V-0. | - | |||||
| SD18 | MDD 辰达行 | SOD-323, 350W (8/20μs), IEC61000-4-2 ±15kV/±8kV, IEC61000-4-4 40A (5/50ns), low clamping, UL 94V-0. | - | |||||
| SD18C | MDD 辰达行 | Bi-directional TVS Diodes, SOD-323, ESD Protection for Cell Phones, Microprocessor Equipment, PDAs, Notebooks, Desktops, Servers. | - | |||||
| 2SD1766R | Shikues 时科  | Low VCE(sat) = 0.5V (IC = 2A, IB= 0.2A), hFE Classification. | - | |||||
| 2SD1664R | Shikues 时科 | - | ||||||
| 2SD1615 | Shikues 时科 | - | ||||||
| 2SD1614 | Shikues 时科 | Used for switching and amplifying in electrical and electronic circuits. | - | |||||
| 2SD1624 | Shikues 时科 | - | ||||||
| 2SD1781KR | Shikues 时科 | High Collector Current (IC=500mA), Complementary To 2SB1197K, Excellent HFE Linearity, High Power Dissipation (PC=300mW). | - | |||||
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